ZTX705

Single Bipolar Transistors Overview

The ZTX705 is a PNP silicon planar medium power Darlington transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage of -120 V and supports a continuous collector current of -1 A. The device provides a static forward current transfer ratio (hFE) ranging from 2K to 30K at IC = -1 A. Power dissipation is rated at 1 W at 25°C ambient temperature, with a derating factor of 5.7 mW/°C above this threshold. The component operates within a junction and storage temperature range of -55°C to +200°C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability suitable for direct drive applications
• Robust collector-base breakdown voltage rating for inductive loads
• Designed for efficient switching in lamp, solenoid, and relay driver circuits

Single Bipolar Transistors Applications

• Lamp drivers
• Solenoid drivers
• Relay drivers

Single Bipolar Transistors Procurement Notes

Verify the specific part number suffix against official manufacturer documentation to confirm pinout orientation and package compatibility. Ensure that thermal management strategies align with the specified derating curves for continuous operation. Confirm that input drive signals meet the required base current specifications to achieve saturation under expected load conditions.

Single Bipolar Transistors Selection Notes

Select the ZTX705 when high current gain is required to minimize base drive complexity in PNP configurations. Consider the -120 V collector-emitter voltage rating for driving inductive loads such as relays or solenoids. Evaluate the thermal performance based on the 1 W power dissipation limit and the 5.7 mW/°C derating factor to ensure reliable operation within the specified temperature range.

Single Bipolar Transistors Part Context

This component belongs to the ZTX series of PNP silicon planar medium power Darlington transistors produced by Diodes Incorporated. The series is characterized by high current gain and robust voltage ratings, making it suitable for various power switching applications. The ZTX705 variant specifically offers a -120 V collector-emitter voltage rating, distinguishing it from lower-voltage counterparts in the same product family.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer substitution guides for verified equivalent parts. Cross-reference electrical parameters such as collector-emitter voltage, continuous collector current, and current gain to ensure functional compatibility in existing circuit designs.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the ZTX705?

The maximum collector-emitter voltage (VCEO) for the ZTX705 is -120 V.

What is the typical transition frequency of the ZTX705?

The typical transition frequency (fT) is 160 MHz, measured at IC = -100 mA and VCE = -10 V.

How does the power dissipation change with temperature?

Power dissipation is rated at 1 W at an ambient temperature of 25°C and must be derated by 5.7 mW/°C for temperatures above 25°C.