ZTX796A

Single Bipolar Transistors Overview

The ZTX796A is a PNP medium power high gain transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of -200V and supports a continuous collector current of -0.5A with a peak pulse current of -1A. The device operates at a transition frequency of 100MHz and provides a static forward current transfer ratio (hFE) ranging from 100 to 800 depending on the test conditions. Power dissipation is rated at 1W in standard mounting configurations, extending to 1.5W under specific PCB copper pad conditions. The component utilizes an E-Line (TO-92 compatible) package and is qualified to AEC-Q101 standards.

Single Bipolar Transistors Feature Summary

• High voltage capability exceeding -200V for robust operation in demanding circuits
• High DC current gain ensuring effective hold-up performance across various load currents
• Extended thermal operating range supporting junction temperatures up to 200°C
• Qualified to automotive reliability standards for high-reliability applications

Single Bipolar Transistors Applications

• High-voltage switching circuits requiring elevated breakdown tolerance
• Automotive electronic systems necessitating AEC-Q101 compliance
• High-gain amplifier stages within medium power signal processing
• Power management modules operating under elevated temperature conditions

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix when purchasing, as packaging options include loose box or taped ammo box configurations. Confirm that the procurement channel is authorized by Diodes Incorporated to ensure product authenticity and warranty coverage. Check the latest datasheet revision for any updates to mechanical dimensions or electrical characteristics prior to finalizing design integration.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand a PNP transistor with a minimum -200V collector-emitter breakdown voltage. The high hFE range makes it suitable for applications prioritizing signal amplification efficiency. Ensure the thermal design accommodates the specified power dissipation limits based on the intended PCB layout and lead length configuration.

Single Bipolar Transistors Part Context

This component belongs to the ZTX series of medium power transistors produced by Diodes Incorporated. It serves as the complementary counterpart to the ZTX696B NPN type. The device is designed for general-purpose high-voltage applications where reliable performance and high gain are critical factors in system architecture.

Single Bipolar Transistors Replacement Considerations

The ZTX696B is documented as the complementary NPN type within the same product line. Verify pinout compatibility and electrical parameter alignment before substituting with other generic high-voltage PNP transistors.

Single Bipolar Transistors FAQ

What is the maximum junction temperature rating for the ZTX796A?

The device supports an operating junction temperature range up to +200°C.

Is the ZTX796A compliant with automotive reliability standards?

Yes, the component is qualified to AEC-Q101 standards for high reliability.

How does the power dissipation rating vary with mounting conditions?

Power dissipation is rated at 1W for standard mounting and increases to 1.5W when mounted on a 25mm x 25mm 1oz copper single-sided FR4 PCB.