Single Bipolar Transistors ZTX855STOB product image

ZTX855STOB

$0.33
  • Description:TRANS NPN 150V 4A E-LINE
  • Series:-

SKU:7dd0256ccff7 Category: Brand:

  
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ZTX855STOB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 150V 4A E-LINE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for ZTX855STOB

  • Description:TRANS NPN 150V 4A E-LINE
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:260mV @ 400mA, 4A
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 5V
  • Power - Max:1.2 W
  • Frequency - Transition:90MHz
  • Operating Temperature:-55°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:E-Line-3
  • Supplier Device Package:E-Line (TO-92 compatible)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for ZTX855STOB

ZTX855STOB

Single Bipolar Transistors Overview

The ZTX855STOB is an NPN medium power transistor from the ZTX series, manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 150V and a continuous collector current (IC) of 4A. The device supports a peak pulse current (ICM) of 10A and operates at junction temperatures up to 200°C. Power dissipation reaches 1.58W under specific mounting conditions. It utilizes an E-Line (TO-92 compatible) package with matte tin-plated leads.

Single Bipolar Transistors Feature Summary

  • High temperature operation capability up to 200°C
  • Low saturation voltage for reduced conduction losses
  • Qualified to AEC-Q101 standards for automotive reliability
  • Lead-free finish compliant with RoHS directives

Single Bipolar Transistors Applications

  • Automotive ignition systems
  • Power actuators
  • Switching power supplies
  • General purpose amplification

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official Diodes Incorporated documentation to confirm packaging specifications such as tape-and-reel or loose box quantities. Confirm that the component meets specific environmental requirements like halogen-free status if mandated by your design constraints. Ensure compatibility with your assembly processes regarding lead finish and thermal management.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling and substantial continuous current are required in a through-hole package. Consider its low saturation voltage for efficiency in switching applications. Evaluate the thermal resistance characteristics relative to your PCB layout and ambient operating conditions to ensure reliable performance within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to the ZTX series of medium power transistors designed for robust performance in demanding environments. The series includes complementary PNP types and variants optimized for different voltage and current ratings. These devices are widely used in industrial and automotive electronics where reliability and thermal stability are critical.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the ZTX955 as the complementary NPN type. Verify pinout compatibility and electrical parameters before substitution. Cross-reference with other manufacturers' TO-92 compatible packages ensuring matching VCEO, IC, and thermal ratings.

Single Bipolar Transistors FAQ

What is the maximum junction temperature for the ZTX855?

The maximum operating junction temperature (TJ) is 200°C.

Is the ZTX855 suitable for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability in automotive environments.

What is the typical saturation voltage at full load?

The collector-emitter saturation voltage (VCE(sat)) is typically 60mV at IC=1A and IB=100mA.

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