ZTX857STOA

Single Bipolar Transistors Overview

The ZTX857STOA is an NPN silicon planar medium-power high-current transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 300 V and supports continuous collector currents up to 3 A, with peak pulse current capability reaching 5 A. The device exhibits very low saturation voltage characteristics and operates within a junction temperature range of -55 °C to 200 °C. Power dissipation is rated at 1.2 W at 25 °C ambient temperature. The component utilizes an E-Line TO-92 compatible package.

Single Bipolar Transistors Feature Summary

• High-voltage operation capability with 300 V collector-emitter breakdown
• Robust current handling supporting 3 A continuous and 5 A peak loads
• Optimized for low saturation voltage performance in switching applications
• Extended thermal operating range suitable for demanding environments

Single Bipolar Transistors Applications

• Automotive power switching circuits
• Industrial motor control systems
• General-purpose high-voltage transistor applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix STOA against official Diodes Incorporated documentation to confirm package type and tape-and-reel specifications. Confirm that the procurement channel is authorized, as unauthorized sales void warranties. Ensure the design team acknowledges the manufacturer's recommendation regarding new designs before finalizing component selection.

Single Bipolar Transistors Selection Notes

Evaluate the 300 V collector-emitter voltage rating against maximum circuit voltages to ensure adequate headroom. Assess the 3 A continuous current limit relative to load requirements, considering derating factors for elevated ambient temperatures. Verify that the E-Line package dimensions align with existing PCB footprint constraints and thermal management strategies.

Single Bipolar Transistors Part Context

The ZTX857 belongs to the ZTX series of NPN silicon planar transistors designed for medium-power and high-current applications. This family provides robust performance for automotive and industrial sectors requiring reliable switching capabilities under high-voltage conditions.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet or contact Diodes Incorporated directly for verified substitute part numbers. Do not assume functional equivalence with other high-voltage transistors without cross-referencing absolute maximum ratings and electrical characteristics.

Single Bipolar Transistors FAQ

What is the recommended usage status for the ZTX857?

The datasheet explicitly states that the ZTX857 is not recommended for new designs and advises contacting the manufacturer.

How does the ZTX857 handle peak current loads?

The device supports a peak pulse current (ICM) of 5 A, measured under pulsed conditions with a pulse width of 300 µs and a duty cycle of 2% or less.

What is the maximum operating junction temperature?

The maximum operating and storage junction temperature (TJ, TSTG) is 200 °C.