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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZVN4206NTA is a small signal N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current rating of 1A at 25°C. The device exhibits a maximum on-resistance of 1Ω under specified conditions, with a gate-source threshold voltage typically capped at 3V at 1mA. Designed for surface-mount applications, it utilizes the SM8 package (SOT-223-8) configuration. The component supports an operating junction temperature range from -55°C to +150°C and includes built-in diode functionality within its dual-element structure.
Feature Summary
- N-channel enhancement mode silicon metal-oxide semiconductor technology
- Dual-element configuration with integrated built-in diode
- Logic-level gate drive capability for efficient switching
- Surface-mount assembly in compact SM8 package
Applications
- Low-side switching in general-purpose power management circuits
- Load control in consumer electronics and industrial equipment
- Signal isolation and level shifting applications
Procurement Notes
Verify the specific suffix designation against official Diodes Incorporated documentation to confirm exact electrical tolerances and packaging specifications. Confirm RoHS compliance status and REACH registration details prior to integration. Ensure the procurement source provides valid traceability records for quality assurance purposes.
Selection Notes
Select this component when a dual N-channel MOSFET with integrated diode functionality is required in a surface-mount form factor. Evaluate thermal dissipation requirements relative to the SM8 package limitations. Compare on-resistance values against circuit load demands to ensure adequate efficiency margins during operation.
Part Context
This part belongs to the ZVN4206 series of small signal MOSFETs produced by Diodes Incorporated. The series offers various package options including through-hole and surface-mount configurations. The ZVN4206NTA specifically addresses needs for compact dual-channel solutions with integrated protection diodes in modern electronic designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers. Consult official manufacturer cross-reference guides for validated replacements.
