Single Bipolar Transistors ZX5T849ZTA product image

ZX5T849ZTA

$0.73
  • Description:TRANS NPN 30V 6A SOT-89-3
  • Series:-

SKU:9d58a1281f05 Category: Brand:

  
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ZX5T849ZTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 30V 6A SOT-89-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for ZX5T849ZTA

  • Description:TRANS NPN 30V 6A SOT-89-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:190mV @ 300mA, 6.5A
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 1V
  • Power - Max:2.1 W
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for ZX5T849ZTA

ZX5T849ZTA

Single Bipolar Transistors Overview

The ZX5T849ZTA is an obsolete NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It features a collector current of 6 A and a collector-emitter breakdown voltage of 30 V. The device operates in a surface-mount SOT-89-3 package with a maximum power dissipation of 2.1 W. Key electrical parameters include a transition frequency of 140 MHz, a DC current gain (hFE) minimum of 100 at 1 A and 1 V, and a collector cutoff current of 50 nA. The saturation voltage is specified as 350 mV at 300 mA base current and 6.5 A collector current. The operating junction temperature range spans from -55°C to 150°C.

Single Bipolar Transistors Feature Summary

  • High current handling capability for power switching applications
  • Optimized for low saturation voltage to reduce conduction losses
  • Suitable for high-frequency operation with defined transition frequency

Single Bipolar Transistors Applications

  • General-purpose power switching circuits
  • Driver stages for motor control systems
  • Power supply output regulation

Single Bipolar Transistors Procurement Notes

This component is officially classified as obsolete and no longer manufactured by Diodes Incorporated. Procurement must rely on verified direct substitutes such as the ZXTN2007ZTA. Buyers should confirm availability through authorized distributors and verify that replacement parts meet identical pinout and electrical specifications to ensure circuit compatibility without redesign.

Single Bipolar Transistors Selection Notes

Designers requiring this specific NPN configuration should evaluate the ZXTN2007ZTA as a primary alternative. Selection criteria must prioritize matching the 30 V breakdown voltage and 6 A current rating. Verify that the substitute supports the required SOT-89-3 footprint and thermal characteristics. Ensure the replacement maintains equivalent hFE and saturation performance for the target application load conditions.

Single Bipolar Transistors Part Context

The ZX5T849ZTA belongs to the single bipolar transistor category within Diodes Incorporated's discrete semiconductor portfolio. It is designed for surface-mount assembly, offering a compact solution for medium-power applications. As an NPN device, it serves as a fundamental switching element in electronic circuits where moderate voltage and high current control are necessary.

Single Bipolar Transistors Replacement Considerations

The ZXTN2007ZTA is a confirmed direct substitute part number. Verify pin compatibility and electrical equivalence before integration into existing designs.

Single Bipolar Transistors FAQ

What is the maximum collector current for the ZX5T849ZTA?

The maximum continuous collector current is 6 A.

Is the ZX5T849ZTA currently in production?

No, the ZX5T849ZTA is obsolete and no longer manufactured.

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