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The ZXMC3A16DN8QTA is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage (Vdss) rating and supports continuous drain currents of 2.9A and 2.1A for its internal channels. The device utilizes a logic-level gate drive architecture, ensuring efficient switching performance with a maximum gate charge (Qg) of 3.9nC at 10V. It exhibits a low on-resistance (Rds(on)) of 120mΩ at Vgs=10V and Id=2.5A. Packaged in an 8-WDFN exposed pad configuration (DFN3020B-8), the component is designed for surface-mount assembly and operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix 'QTA' against the manufacturer's current datasheet to confirm tape-and-reel packaging specifications and quantity per reel. Ensure compliance with RoHS3 directives and check for any recent Product Change Notifications (PCN) regarding manufacturing site or material composition updates prior to final procurement authorization.
Select this component when a dual P-channel solution is required for space-constrained designs. Verify that the 30V voltage rating exceeds the maximum system supply voltage with adequate margin. Confirm that the logic-level gate threshold is compatible with the driving microcontroller's output voltage levels to ensure full enhancement and minimal conduction losses.
This part belongs to the ZXMC3 series of dual MOSFET arrays from Diodes Incorporated. The series is engineered for high-density applications where multiple switching elements are needed in a minimal footprint. The QTA suffix typically denotes a specific tape-and-reel packaging format intended for automated surface-mount assembly processes.
Direct pin-compatible substitutes may include other dual P-channel MOSFETs in 8-WDFN packages with similar 30V ratings and current capabilities. Verify Rds(on) and gate charge parameters to ensure equivalent switching performance. Cross-reference with Diodes Incorporated's own ZXMP3A16DN8 variants if packaging differences exist.