ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 5.8A/4.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.8A, 4.8A
- Rds On (Max) @ Id, Vgs：25mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1800pF @ 25V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The ZXMC3A18DN8 is a complementary enhancement mode MOSFET array manufactured by Zetex Semiconductors, now part of Diodes Incorporated. It integrates an N-channel and a P-channel device in a low-profile SOIC-8 package. The N-channel unit provides a drain-source voltage (V(BR)DSS) of 30V with a maximum on-resistance (RDS(on)) of 0.025Ω at VGS=10V and ID=5.8A. The P-channel unit offers a V(BR)DSS of -30V with a maximum RDS(on) of 0.035Ω at VGS=-10V and ID=-4.8A. Both devices operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes trench MOSFET technology for low on-resistance and fast switching speed
- Designed for high efficiency power management applications
- Features low threshold voltage and low gate drive requirements
Applications
- Motor Drive
- LCD backlighting
Procurement Notes
Verify the manufacturer origin carefully, as this component was originally produced by Zetex Semiconductors plc before its acquisition by Diodes Incorporated. Confirm that the specific ordering suffix matches the required reel size and tape width specifications provided in the official documentation to ensure compatibility with automated assembly equipment.
Selection Notes
Select this component for designs requiring a matched complementary pair in a compact surface-mount footprint. Ensure the application voltage does not exceed the 30V rating and that the thermal design accommodates the specified power dissipation limits under the expected ambient conditions and PCB copper coverage.
Part Context
This device belongs to the ZXMC3A series of complementary MOSFET arrays. It is designed to replace discrete N-channel and P-channel solutions, saving board space. The product line emphasizes low profile packaging and high current handling capabilities suitable for portable and industrial electronics.
Replacement Considerations
Direct substitutes should be sought from the ZXMC3A family or equivalent complementary MOSFET arrays with matching 30V ratings and SOIC-8 footprints. Verify pinout compatibility and electrical parameters such as RDS(on) and gate charge when evaluating alternative manufacturers.
