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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 5.2A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：5.2A (Ta), 4.7A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：1V @ 250mA (Min)
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：770pF @ 40V, 1000pF @ 20V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMC4A16DN8TA is a complementary enhancement mode MOSFET pair manufactured by Diodes Incorporated, utilizing Zetex trench technology. The N-channel device provides a drain-source voltage of 40V and a continuous drain current of 5.2A at 25°C, with a maximum on-resistance of 0.075Ω. The P-channel counterpart offers -40V breakdown and -4.7A continuous current, featuring a maximum on-resistance of 0.100Ω. Packaged in a low-profile SOIC-8, the component supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Combines low on-resistance with fast switching speed for high efficiency
- Designed for low threshold operation and reduced gate drive requirements
- Utilizes unique trench structure for optimized power management performance
Applications
- Motor drive systems
- LCD backlighting circuits
Procurement Notes
Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm reel size and quantity specifications. Ensure compatibility with standard surface mount assembly processes for SOIC packages. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this complementary pair for applications requiring matched N-channel and P-channel characteristics within a single package. Evaluate thermal resistance values based on specific PCB copper coverage and airflow conditions. Consider the low gate charge parameters when designing high-frequency switching circuits to minimize driver losses.
Part Context
This component belongs to the ZXMC4A series of complementary MOSFETs produced by Zetex Semiconductors, now part of Diodes Incorporated. It represents a generation of trench technology devices designed to replace discrete solutions in compact power management designs. The SOIC-8 package allows for space-constrained implementations while maintaining robust electrical performance.
Replacement Considerations
Publicly confirmed substitute part numbers include DMC4040SSD and DMC4050SSD from Diodes Incorporated. Verify pinout compatibility and absolute maximum ratings before substitution. Cross-reference thermal resistance and on-resistance values to ensure equivalent circuit performance.
