ZXMC4A16DN8TC

$0.42

Description：MOSFET N/P-CH 40V 5.2A 8SO
Series：-

SKU:75a519c02367 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 5.2A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：5.2A (Ta), 4.7A (Ta)
Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：1V @ 250mA (Min)
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：770pF @ 40V, 1000pF @ 20V
Power - Max：2.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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ZXMC4A16DN8TC

Overview

The ZXMC4A16DN8TC is a complementary N/P-channel enhancement mode MOSFET array in an SOIC-8 package. The N-channel device features a drain-source voltage of 40V, continuous drain current of 5.2A at 25°C, and on-resistance of 0.05Ω. The P-channel counterpart offers -40V breakdown, -4.7A current, and 0.06Ω resistance. Both channels operate within a junction temperature range of -55°C to +150°C.

Feature Summary

Utilizes trench MOSFET structure for low on-resistance and fast switching speed
Designed for low threshold voltage and reduced gate drive requirements
Low profile surface mount packaging

Applications

Motor drive circuits
LCD backlighting systems
High efficiency low voltage power management

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm reel size and quantity specifications. Confirm that the component meets required environmental standards such as RoHS compliance before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high efficiency in low voltage environments. Ensure thermal design accommodates the specified linear derating factors and junction-to-ambient resistance values under expected operating conditions.

Part Context

This part belongs to the Zetex generation of trench MOSFETs designed to combine low on-resistance with rapid switching capabilities. It serves as a complementary pair solution suitable for space-constrained designs requiring robust performance in power management tasks.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, verify matching voltage ratings, current capacities, and package dimensions to ensure functional compatibility without modifying existing circuit layouts.

FAQ

What is the maximum pulsed drain current for the N-channel?

The maximum pulsed drain current (IDM) for the N-channel is 24 A.

How does the package affect thermal performance?

Thermal resistance varies based on PCB copper coverage; junction-to-ambient resistance ranges from 60°C/W to 100°C/W depending on the specific mounting configuration.