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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8MSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：135mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：290pF @ 25V
- Power - Max：1.04W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package：8-MSOP
- Grade：-
- Qualification：-
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Overview
The ZXMD63C03XTC is a dual N- and P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an MSOP8 package. The N-channel device offers a drain-source breakdown voltage of 30V, a continuous drain current of 2.3A, and a maximum on-resistance of 0.135Ω. The complementary P-channel device features a -30V breakdown voltage, a continuous drain current of -2.0A, and a maximum on-resistance of 0.185Ω. This component is designed for high-density applications requiring low on-resistance and fast switching speeds.
Feature Summary
- Combines low on-resistance with fast switching speed for high efficiency
- Features low threshold voltage and low gate drive requirements
- Utilizes a unique structure to optimize performance in power management
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect Switches
- Motor Control
Procurement Notes
Verify the specific ordering suffix to confirm the reel size and quantity per reel. The 'TC' suffix indicates a 13-inch reel with 4000 units. Confirm RoHS compliance status through official documentation before procurement. Ensure the component meets all thermal and electrical ratings required by the target application design.
Selection Notes
Select this component for designs requiring a matched N- and P-channel pair in a compact surface-mount footprint. Evaluate the total power dissipation capabilities against the expected load currents. Consider the low profile MSOP8 package constraints regarding thermal management and PCB layout space availability.
Part Context
This part belongs to the ZXMD63 series of high-density MOSFETs manufactured by Diodes Incorporated. It is explicitly marked as not recommended for new design with no alternate part provided by the manufacturer. The datasheet revision is DS33499 Rev. 3, dated July 2018.
Replacement Considerations
The datasheet explicitly states there is no alternate part available for this component. Designers should consider redesigning the circuit if this part is no longer suitable for new production due to its obsolete status.
