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The ZXMD63N02XTA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 2.5A at 25°C. The device offers low on-resistance, rated at 130mΩ at VGS=4.5V and 150mΩ at VGS=2.7V. Packaged in an MSOP-8 surface-mount case, it supports a junction temperature range from -55°C to +150°C with a power dissipation of 0.87W.
This component is marked as not recommended for new design with no alternate part available. Verify end-of-life status before procurement. Confirm package details and reel specifications directly with the manufacturer or authorized distributors. Ensure compliance with applicable environmental directives such as RoHS 3.
Select this component for designs requiring a dual N-channel MOSFET in an MSOP-8 package. Evaluate thermal resistance and power dissipation limits under actual operating conditions. Consider the low gate threshold voltage for logic-level drive compatibility. Review safe operating area curves for pulsed current requirements.
The ZXMD63N02XTA belongs to the ZXMD63 series of dual MOSFETs from Diodes Incorporated. This series focuses on minimizing on-resistance while maintaining superior switching characteristics. The specific suffix 'TA' indicates tape and reel packaging with a quantity of 1,000 units per reel.
The datasheet explicitly states there is no alternate part for this component. Engineers must evaluate existing inventory or redesign circuits if discontinuation occurs. No cross-compatibility claims are supported by official documentation.