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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 8MSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：185mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：270pF @ 25V
- Power - Max：1.04W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package：8-MSOP
- Grade：-
- Qualification：-
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Overview
The ZXMD63P03XTC is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -30V and a continuous drain current of -2.0A at 25°C. The device exhibits a low on-resistance of 0.185Ω when the gate-source voltage is -4.5V. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in an MSOP-8 surface-mount package with a thermal resistance of 70°C/W from junction to ambient.
Feature Summary
- Combines low on-resistance with fast switching speed for high efficiency
- Utilizes a unique structure designed for low voltage power management applications
- Features a low profile MSOP package suitable for space-constrained designs
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect Switches
- Motor Control
Procurement Notes
Verify the specific ordering suffix 'XTC' against official documentation to confirm reel size and tape width specifications. Confirm that the part status remains as not recommended for new design before initiating any procurement activities. Ensure compliance with RoHS directives if required by the target application environment.
Selection Notes
Select this component for applications requiring dual P-channel switching in a compact footprint. Evaluate the 0.185Ω on-resistance against load requirements to ensure acceptable conduction losses. Consider the -30V breakdown voltage limit when designing circuits with potential voltage spikes or inductive loads.
Part Context
This part belongs to the ZXMD63 series of high-density MOSFETs from Diodes Incorporated. These devices are engineered to provide a balance between low on-resistance and rapid switching capabilities, targeting efficient power management solutions in modern electronic systems.
Replacement Considerations
The datasheet explicitly states there is no alternate part available for this component. Engineers must verify compatibility carefully if considering alternative suppliers, as direct cross-referencing is not supported by the manufacturer.
