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Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 100V 0.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：800mA, 680mA
- Rds On (Max) @ Id, Vgs：700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：138pF @ 60V, 141pF @ 50V
- Power - Max：870mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMHC10A07N8TC is a complementary enhancement mode MOSFET H-Bridge manufactured by Diodes Incorporated. It integrates two N-channel and two P-channel transistors within an SOIC-8 package. The N-channel device supports a drain-source voltage of 100V with a maximum continuous drain current of 1.0A at VGS=10V and an on-resistance of 0.70Ω. The P-channel counterpart provides -100V breakdown and -0.9A current capability, featuring an on-resistance of 1.00Ω at VGS=-10V. Total gate charges are specified as 2.9nC for the N-channel and 3.5nC for the P-channel.
Feature Summary
- Integrates four channels (two N-type and two P-type) into a single surface-mount package
- Designed for low on-resistance operation compatible with standard logic-level gate drive voltages
- Capable of high-speed switching with nanosecond-scale rise and fall times
Applications
- DC Motor control circuits
- DC-AC Inverter systems
Procurement Notes
Verify component authenticity through authorized distribution channels to ensure compliance with manufacturer specifications. Confirm that the ordering suffix matches the required reel size and tape width parameters. Ensure all handling procedures adhere to electrostatic discharge protection standards during storage and assembly processes.
Selection Notes
Evaluate thermal dissipation requirements based on the specific PCB copper coverage and ambient air conditions. Compare the on-resistance values against the target gate drive voltage to confirm adequate current handling capabilities. Verify that the operating junction temperature range remains within the specified limits under expected load conditions.
Part Context
This component belongs to the ZXMHC10 series of complementary MOSFETs from Diodes Incorporated. It is designed specifically for bridge configurations requiring matched N-type and P-type characteristics in a compact footprint. The SOIC-8 packaging facilitates automated surface mount assembly while providing sufficient isolation between the integrated channels.
Replacement Considerations
Direct functional substitutes require matching 100V ratings and quad-channel H-Bridge topology. Verify pinout compatibility and thermal resistance characteristics before implementation. Cross-referencing with other Diodes Incorporated H-Bridge variants may provide alternative solutions if physical dimensions or electrical thresholds differ.
