ZXMHC3A01N8TC

Overview

The ZXMHC3A01N8TC is a complementary enhancement mode MOSFET H-Bridge from Diodes Incorporated, packaged in an SOIC-8. It integrates two N-channel and two P-channel transistors on a single die. The N-channel devices offer a drain-source breakdown voltage of 30V with a maximum continuous drain current of 2.7A at VGS=10V and an on-resistance of 125mΩ. The P-channel counterparts provide a -30V breakdown voltage with a continuous current of -2.1A and an on-resistance of 210mΩ. Both channels operate within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates two N-channel and two P-channel enhancement mode MOSFETs into a single compact SOIC package for space-constrained designs.
• Features low on-resistance characteristics that are achievable with standard low gate drive voltages.
• Designed specifically for high-side and low-side switching requirements in bridge configurations.

Applications

• DC Motor control
• DC-AC Inverters

Procurement Notes

Verify the specific ordering suffix TC against official Diodes Incorporated documentation to confirm reel size and tape width specifications. Ensure the component meets RoHS compliance standards required by your manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a compact solution for H-Bridge topologies is required. The integrated complementary pair simplifies layout compared to discrete components. Verify that the application's gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Consider thermal derating factors based on the PCB copper area and ambient operating conditions.

Part Context

This device belongs to the ZXMHC3A01 series of complementary MOSFETs manufactured by Diodes Incorporated. It is designed as a direct replacement for other SO-8 packaged H-Bridge solutions requiring similar voltage and current ratings. The series focuses on providing efficient power switching in a minimal footprint for portable and industrial electronics.

Replacement Considerations

Check datasheets for alternative SO-8 complementary MOSFETs with matching 30V ratings and comparable on-resistance values. Ensure pinout compatibility and thermal resistance characteristics align with existing board designs. Verify that substitute components meet the same switching speed and gate charge requirements for the target application.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device is 2.7A at VGS=10V and TA=25°C.

What is the total gate charge for the P-channel transistor?

The total gate charge (Qg) for the P-channel transistor is 5.2nC at VDS=-15V, VGS=-10V, and ID=-1.4A.

What is the operating temperature range for the ZXMHC3A01N8TC?

The operating junction and storage temperature range is -55°C to +150°C.