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Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 30V 3.98A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel (Full Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.98A, 3.36A
- Rds On (Max) @ Id, Vgs：33mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：430pF @ 15V, 670pF @ 15V
- Power - Max：870mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMHC3F381N8TC is a complementary enhancement mode MOSFET H-Bridge from Diodes Incorporated, packaged in an SOIC-8. It integrates two N-channel and two P-channel devices within a single component. The N-channel features a 30V drain-source breakdown voltage (VDSS), a maximum continuous drain current of 4.98A at 25°C, and an on-resistance (RDS(on)) of 33mΩ at VGS=10V. The P-channel counterpart offers a -30V VDSS, a maximum continuous drain current of -4.13A at 25°C, and an RDS(on) of 55mΩ at VGS=-10V. Both channels support low-voltage gate drive at 4.5V.
Feature Summary
- Integrates two N-channel and two P-channel enhancement mode MOSFETs into a single SOIC package for compact H-bridge designs.
- Supports low-voltage gate drive operation at 4.5V to facilitate control by standard logic-level drivers.
Applications
- DC Motor control
- DC-AC Inverters
Procurement Notes
Verify the specific ordering suffix 'TC' against the manufacturer's official documentation to confirm reel size and tape width specifications. Ensure that the procurement channel is authorized to maintain product integrity and warranty coverage. Cross-reference the device marking codes with the datasheet to authenticate the component upon receipt.
Selection Notes
Select this component when a compact solution for driving DC motors or inverters is required. The integrated complementary structure reduces board space compared to discrete MOSFETs. Verify that the application's gate drive voltage aligns with the 4.5V threshold capabilities and that the thermal management strategy accommodates the specified junction-to-ambient resistance values under expected load conditions.
Part Context
This part belongs to the ZXMHC3 series of complementary MOSFET H-Bridges manufactured by Diodes Incorporated. It is designed as a direct replacement for older generations of similar bridge controllers, offering improved on-resistance characteristics and optimized packaging for modern surface-mount assembly processes.
Replacement Considerations
Direct functional equivalents include the ZXMHC3A01N8 and ZXMHC3A01N8TC. When substituting, verify pin compatibility and ensure that the alternative device meets the required 30V breakdown voltage and current handling specifications for the target H-bridge application.
FAQ
What is the maximum continuous drain current for the N-channel?
The maximum continuous drain current for the N-channel is 4.98A at an ambient temperature of 25°C.
Does the device support low-voltage gate drive?
Yes, the device is designed to operate with a low gate drive voltage of 4.5V.
What is the package type for this component?
The component is housed in an SOIC-8 (Small Outline Integrated Circuit, 8-pin) package.
