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Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 60V 1.39A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel (Full Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：1.39A, 1.28A
- Rds On (Max) @ Id, Vgs：250mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：166pF @ 40V, 141pF @ 50V
- Power - Max：870mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMHC6A07N8TC is a complementary enhancement mode MOSFET H-Bridge manufactured by Diodes Incorporated. It integrates two N-channel and two P-channel devices within an SOIC-8 package. The N-channel transistor supports a drain-source voltage of 60V with a continuous current of 1.8A at VGS=10V, featuring an on-resistance of 0.25Ω. The P-channel counterpart handles -60V and -1.4A at VGS=-10V, with an on-resistance of 0.40Ω. Both channels exhibit low gate charge values of 3.2nC and 5.1nC respectively, enabling fast switching times. The device operates across a temperature range of -55°C to +150°C.
Feature Summary
- Integrates four channels (two N-type and two P-type) into a single compact surface-mount package
- Designed for low on-resistance operation compatible with standard logic-level gate drive voltages
- Optimized for high-efficiency power management applications through rapid switching characteristics
Applications
- DC Motor control systems
- DC-AC Inverters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm reel size and tape width specifications. Ensure that the component meets all required environmental standards and packaging configurations prior to integration into production workflows.
Selection Notes
Select this component when a compact solution for driving inductive loads is required. Evaluate thermal dissipation requirements based on the specified junction-to-ambient resistance values under your specific PCB copper coverage conditions. Confirm that the gate drive voltage aligns with the optimal on-resistance performance curves.
Part Context
This part belongs to the ZXMHC6A07 series from Diodes Incorporated, designed as a complementary MOSFET H-Bridge. It utilizes silicon technology to provide integrated switching capabilities for bridge configurations without requiring external discrete components.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-compatibility should be validated against pinout definitions, electrical ratings, and thermal characteristics before implementation.
