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Product Detailed Parameters
- Description：MOSFET 4N-CH 60V 1.4A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：1.4A
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：166pF @ 40V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZXMHN6A07T8TA is a dual N-channel MOSFET H-bridge from Diodes Incorporated, housed in an SM-8 (SOT-223) package. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 1.6A at 25°C. The on-state resistance is specified as 0.3Ω at VGS=10V and 1.8A, or 0.45Ω at VGS=4.5V and 1.3A. Gate charge is typically 3.2nC, with turn-on delay and rise times of 1.8ns and 1.4ns respectively. Total power dissipation reaches 1.4W for a single transistor under standard mounting conditions.
Feature Summary
- Integrated H-bridge configuration combining two N-channel trench MOSFETs within a compact surface-mount package.
- Optimized low on-resistance structure designed to minimize conduction losses while maintaining fast switching speeds.
- Low gate drive requirements facilitate efficient control by standard logic-level drivers.
Applications
- DC-AC converters
- Motor control systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details. The T8TA suffix indicates a reel size of 7 inches with a tape width of 12mm and a quantity of 1,000 units per reel. Confirm compliance with RoHS directives and halogen-free status requirements prior to procurement.
Selection Notes
Select this component for applications requiring integrated high-side and low-side switching capabilities in a small footprint. Ensure the thermal design accounts for the junction-to-ambient resistance of 89°C/W when operating a single transistor. Verify that the gate drive voltage meets the threshold for the desired on-state resistance level.
Part Context
This device belongs to the Zetex ZXMHN6A series of 60V N-channel MOSFET H-bridges manufactured by Diodes Incorporated. The series utilizes advanced trench technology to deliver improved performance over previous generations. The SM-8 package provides a robust solution for power management applications where space constraints are critical.
Replacement Considerations
Direct substitutes include other 60V N-channel H-bridge MOSFETs in SOT-223 packages from various manufacturers. When evaluating alternatives, compare RDS(ON) values at equivalent gate voltages and verify pinout compatibility. Ensure the replacement package matches the SM-8 mechanical dimensions for proper PCB integration.
