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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 5.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.9A
- Rds On (Max) @ Id, Vgs：25mOhm @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：22.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1880pF @ 10V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN2A04DN8TA is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, utilizing TRENCH technology for low on-resistance and fast switching. It features a Drain-Source Voltage (V_DSS) of 20V and a continuous drain current (I_D) of 5.9A at 25°C with V_GS=10V. The static drain-source on-state resistance (R_DS(on)) is 25mΩ at V_GS=4.5V and I_D=5.9A. Operating within a junction temperature range of -55°C to +150°C, the device is housed in an 8-SO surface mount package.
Feature Summary
- Dual N-channel configuration integrated into a single low-profile SOIC package
- TRENCH MOSFET structure providing low on-resistance and fast switching speed
- Logic level gate drive capability with low threshold voltage
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging details. The TA suffix indicates a reel tape width of 7 inches with 12mm tape and a quantity of 500 units per reel. Confirm RoHS3 compliance status through official datasheets or environmental statements before finalizing procurement specifications.
Selection Notes
Select this component for high-efficiency, low-voltage power management applications requiring fast switching speeds. Ensure the design accommodates the 20V drain-source voltage limit and verify that the thermal dissipation requirements align with the specified junction-to-ambient thermal resistance values under the intended PCB copper coverage conditions.
Part Context
This part belongs to the ZXMN2 series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated under the Zetex brand. The series utilizes TRENCH technology to combine low on-resistance with fast switching characteristics, targeting efficiency improvements in low-voltage power management circuits.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, ensure compatibility with the 20V V_DSS rating, 8-SO package dimensions, and dual N-channel configuration. Verify that any replacement maintains similar R_DS(on) and switching performance metrics for equivalent circuit functionality.
