ZXMN3A04DN8TA

Overview

The ZXMN3A04DN8TA is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, utilizing TRENCH technology. It features a Drain-Source Voltage (V_DSS) of 30 V and a maximum continuous drain current (I_D) of 8.5 A at 25°C. The device exhibits a low static Drain-Source On-State Resistance (R_DS(on)) of 0.02 Ω at V_GS=10V and 0.03 Ω at V_GS=4.5V. Gate-Source Threshold Voltage (V_GS(th)) is 1.0 V. Thermal resistance (Junction-to-Ambient) ranges from 58 to 100 °C/W depending on PCB copper coverage. Operating temperature spans -55 to +150 °C.

Feature Summary

• Dual configuration in a single low-profile SOIC package
• TRENCH MOSFET structure for low on-resistance and fast switching
• Low gate threshold voltage enabling low gate drive requirements

Applications

• DC-DC Converters
• Power Management Functions
• Disconnect switches
• Motor control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details. The 'TA' suffix indicates a reel tape width of 7 inches with 12 mm pitch containing 500 units per reel. Confirm that the component meets RoHS compliance standards required for your assembly process before finalizing procurement orders.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power management. Ensure the application operates within the 30 V drain-source voltage limit and accounts for thermal derating factors based on the specific PCB copper area available. Verify that the gate drive voltage supports the specified R_DS(on) performance levels.

Part Context

This part belongs to the ZXMN3A series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated under the Zetex brand. The series utilizes TRENCH technology to achieve low on-resistance and fast switching speeds suitable for high-efficiency applications. The device is housed in an SOIC-8 surface mount package.

Replacement Considerations

Consult the manufacturer's datasheet for officially confirmed substitute part numbers. When evaluating alternatives, verify compatibility regarding pinout configuration, voltage ratings, and thermal characteristics to ensure functional equivalence without speculative cross-compatibility claims.

FAQ

What is the typical turn-on delay time for the ZXMN3A04DN8?

The typical turn-on delay time (t_d(on)) is 5.2 ns, measured at V_DD = 15V, I_D = 1A, R_G = 6.0 Ω, and V_GS = 10V.

Does the switching characteristic vary with junction temperature?

No, the switching characteristics are independent of operating junction temperature according to the device specifications.

What is the reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge (Q_rr) is 11 nC, measured at T_J = 25°C, I_F = 2.3A, and di/dt = 100A/µs.