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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.5A
- Rds On (Max) @ Id, Vgs：20mOhm @ 12.6A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：36.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1890pF @ 15V
- Power - Max：1.81W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN3A04DN8TC is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30 V and a continuous drain current of 8.5 A at 25°C. The device exhibits a low on-resistance of 0.02 Ω at VGS=10V and 0.03 Ω at VGS=4.5V. Packaged in an SOIC-8 surface-mount configuration, it supports a junction temperature range from -55°C to +150°C. Key dynamic parameters include a gate charge of 19.9 nC at VGS=5V and switching times with turn-on delay of 5.2 ns.
Feature Summary
- Utilizes TRENCH MOSFET structure for low on-resistance and fast switching speed
- Designed for low threshold operation and reduced gate drive requirements
- Integrated body diode with defined reverse recovery characteristics
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm reel specifications. The TC suffix indicates a 13-inch reel containing 2500 units. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before finalizing procurement plans.
Selection Notes
Select this component for applications requiring high efficiency in low-voltage power management. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding the continuous drain current limits which vary based on ambient temperature and PCB thermal dissipation capabilities.
Part Context
This part belongs to the ZXMN3A series of dual N-channel enhancement mode MOSFETs. It is designed as a successor to older technologies, offering improved performance metrics compared to standard planar MOSFETs. The device is marketed under the Zetex brand lineage acquired by Diodes Incorporated.
Replacement Considerations
Direct substitutes must match the 30V rating, dual N-channel configuration, and SOIC-8 package. Verify that alternative components meet the required RDS(on) and switching speed specifications. Cross-referencing with other manufacturers' dual MOSFET arrays is recommended if availability is constrained.
