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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 2.9A 8MLP
- Series：*
- Mfr：Diodes Incorporated
- Package：Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ZXMN3AM832TA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes UMOS technology and is housed in an MLP-8 package. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 3.7 A. The on-resistance (Rds On) is specified at 180 mOhms, with a gate-source voltage range of -20 V to +20 V. Power dissipation reaches 3 W, operating within a temperature range of -55°C to +150°C. Switching characteristics include a typical turn-on delay of 1.7 ns, turn-off delay of 6.6 ns, rise time of 2.3 ns, and fall time of 2.9 ns.
Feature Summary
- Dual N-channel configuration integrated into a single compact surface-mount package for space-constrained designs.
- UMOS technology provides low on-resistance and fast switching speeds suitable for high-frequency applications.
- Enhancement mode operation allows for direct logic interface compatibility.
Applications
- Low-side switching in portable electronic devices
- Load management in battery-powered systems
- DC-DC converter output stages
Procurement Notes
Verify component authenticity through authorized distribution channels due to the presence of counterfeit risks in the semiconductor market. Confirm RoHS compliance status as indicated in official documentation, noting that specific listings may show varying environmental compliance markers. Ensure the MLP-8 package type matches the intended PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. The 30V rating suits low-voltage DC bus applications. Evaluate thermal performance based on the 3W power dissipation limit and the thermal resistance characteristics of the MLP-8 package. Ensure the 180mOhm Rds On meets the efficiency requirements for the target load current of 3.7A.
Part Context
This part belongs to the ZXMN3 series of dual MOSFETs from Diodes Incorporated. It shares the MLP-8 packaging format with complementary P-channel variants like the ZXMC3AM832TA, allowing for potential half-bridge configurations using matched packages from the same manufacturer family.
Replacement Considerations
No official substitute part numbers are documented for this specific model. When evaluating alternatives, verify that the replacement maintains the 30V Vds rating, similar Id capabilities, and compatible MLP-8 pinout to ensure mechanical and electrical interchangeability without circuit redesign.
