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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.7A 8DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
- Rds On (Max) @ Id, Vgs：120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：190pF @ 25V
- Power - Max：1.7W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：DFN3020B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The ZXMN3AMCTA is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an 8-pin DFN3020B-8 surface-mount package. It features a 30V drain-source voltage rating and a continuous drain current of 3.7A at 25°C. The device offers a maximum on-resistance of 120mΩ at VGS=10V and 180mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.0V to 3.0V, total gate charge of 3.9nC at VGS=10V, and input capacitance of 190pF. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for compact power management solutions
- Low profile DFN3020B-8 package with thermally efficient design
- Optimized for low on-state resistance and fast switching performance
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Portable electronic devices
Procurement Notes
Verify the specific ordering suffix 'CTA' against the manufacturer's official documentation to confirm reel size, tape width, and quantity per reel specifications. Ensure compliance with RoHS3 and halogen-free requirements as stated in the product summary. Confirm moisture sensitivity level (MSL 1) and storage conditions prior to assembly.
Selection Notes
Select this component for applications requiring a small footprint with a 6mm² area, which is 50% smaller than TSOP6 or SOT23-6 packages. Consider the thermal resistance values based on the specific PCB copper area and layer configuration. Evaluate the gate charge and switching times against the driving circuit capabilities to ensure optimal efficiency.
Part Context
This part belongs to the ZXMN3AMC product line by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes a silicon technology process and is intended for high-efficiency power management tasks where space constraints are critical.
Replacement Considerations
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that the replacement matches the 30V V(BR)DSS, DFN3020B-8 package dimensions, and pinout configuration. Ensure thermal characteristics and electrical ratings meet or exceed the original specifications.
