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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.7A
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：608pF @ 15V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN3F31DN8TA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated (formerly Zetex). It utilizes Trench MOSFET technology to achieve low on-resistance, specifically optimized for 4.5V gate drive applications. The device features a drain-source voltage of 30V and supports continuous drain currents up to 7.3A at 25°C with a 10V gate drive. Key electrical parameters include an on-resistance of 0.024Ω at VGS=10V and 0.039Ω at VGS=4.5V. Packaged in an 8-SO surface-mount format, it operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration utilizing Trench MOSFET technology for enhanced performance.
- Optimized for low on-resistance with capability for 4.5V logic-level gate drive.
- High current handling capacity suitable for power management and switching applications.
Applications
- DC-DC Converters
- Power management functions
- Load switching
- Motor control
- Back lighting
Procurement Notes
Verify the specific ordering suffix TA to confirm tape and reel packaging specifications. Confirm component authenticity through authorized distribution channels to ensure compliance with RoHS directives. Check for updated datasheet revisions or product change notices prior to final design implementation.
Selection Notes
Select this component for designs requiring dual N-channel isolation in a compact SO8 package. Ensure the driving circuit can provide sufficient gate voltage to utilize the low RDS(on) characteristics. Evaluate thermal dissipation requirements based on the specified power ratings and PCB copper coverage conditions.
Part Context
This part belongs to the ZXMN3F31 series of dual MOSFETs from Diodes Incorporated. It represents a generation of devices designed to improve efficiency in low-voltage power conversion systems. The manufacturer transitioned from Zetex Semiconductors plc to Diodes Incorporated, maintaining the technical lineage of these components.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, verify that the replacement matches the 30V V(BR)DSS rating, SO8 package dimensions, and dual N-channel configuration to maintain circuit compatibility.
