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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4.3A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.3A
- Rds On (Max) @ Id, Vgs：40mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1407pF @ 40V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN6A09DN8TA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, utilizing Zetex trench technology. It features an SO-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source breakdown voltage of 60V and a gate-source voltage limit of ±20V. The static drain-source on-resistance is specified at 40mΩ (max) at VGS=10V and 60mΩ (max) at VGS=4.5V. Continuous drain current reaches 5.6A at 25°C ambient temperature. Switching characteristics include a turn-on delay of 4.9ns and a fall time of 4.6ns. Total gate charge is 12.4nTyp at VGS=5V. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual channel configuration in a compact SOIC package
- Low on-resistance combined with fast switching speed
- Low threshold voltage for efficient gate drive requirements
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the manufacturer origin, as the component was originally produced by Zetex Semiconductors plc before its acquisition by Diodes Incorporated. Confirm the specific ordering suffix TA indicates the reel packaging format. Ensure the datasheet version matches the required specifications, as legacy documentation may differ from current manufacturing standards. Request RoHS compliance confirmation for environmental regulatory adherence.
Selection Notes
Select this component for low-voltage power management applications requiring dual channel isolation in a small footprint. Evaluate thermal performance based on the specific PCB copper coverage, as power dissipation ratings vary significantly between single-die and dual-die active configurations. Consider the 60V rating for systems operating below this threshold. Verify that the gate drive voltage meets the minimum requirements for optimal RDS(on) performance.
Part Context
This part belongs to the ZXMN6A series of high-voltage MOSFETs designed for efficiency. The 'D' in the model number denotes the dual channel configuration, while 'N8' specifies the SO-8 package type. The 'TA' suffix typically refers to the tape and reel packaging quantity. This series represents a generation of trench MOSFETs aimed at reducing conduction losses while maintaining rapid switching capabilities.
Replacement Considerations
Direct substitutes should be sought within the ZXMN6AxxDN8 family or equivalent dual N-channel MOSFETs in SO-8 packages. Verify pinout compatibility, specifically the arrangement of Drain 1, Source 1, Gate 1, Drain 2, Source 2, and Gate 2. Ensure replacement devices match the 60V V(BR)DSS and similar RDS(on) limits. Cross-referencing with Diodes Incorporated's official substitution guide is recommended.
