ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 4.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
- Rds On (Max) @ Id, Vgs：70mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：630pF @ 15V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The ZXMP3A17DN8TA is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum on-resistance of 0.070 ohms at VGS=-10V and ID=-3.2A. The device supports a continuous drain current of -4.4A at 25°C and handles pulsed currents up to -16.2A. Packaged in a low-profile SOIC-8, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual P-channel configuration with TRENCH MOSFET technology for low on-resistance and fast switching speed
- Low threshold voltage enabling efficient low gate drive operation
- Low profile SOIC package suitable for surface mount applications
Applications
- Motor Drive systems
- LCD backlighting circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The TA suffix indicates a reel quantity of 500 units in 12mm tape. Confirm that the component meets RoHS compliance standards required for your assembly process before finalizing procurement orders.
Selection Notes
Select this component for high-efficiency, low-voltage power management designs requiring dual P-channel control. Ensure the thermal design accommodates the specified junction-to-ambient resistance values under expected operating conditions. Verify that the gate drive voltage aligns with the low threshold characteristics for optimal performance.
Part Context
This part belongs to the Zetex TRENCH MOSFET family, which combines low on-resistance with fast switching capabilities. The manufacturer transitioned from Zetex Semiconductors plc to Diodes Incorporated, maintaining the product lineage for these specific dual P-channel devices used in power management applications.
Replacement Considerations
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that replacement components match the -30V VDS rating, dual P-channel configuration, and SOIC-8 footprint to ensure mechanical and electrical compatibility.
