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The ZXMP6A16DN8TA is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -3.9 A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 85 mΩ at VGS = -10V and 125 mΩ at VGS = -4.5V. Packaged in an SO-8 surface-mount case, it supports a power dissipation of 1.25 W and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The TA suffix indicates a tape and reel quantity of 500 units. Confirm that the required package type matches the SO-8 form factor specified in the datasheet before finalizing procurement orders.
Select this component when a dual P-channel solution is required for 60V systems. Ensure the gate drive voltage meets the threshold requirements for the desired RDS(ON) level. Verify thermal derating curves if operating above +25°C ambient temperature or under continuous load conditions.
This part belongs to the ZXMP6A series of dual P-channel MOSFETs from Diodes Incorporated. It shares the same functional description as the non-suffixed ZXMP6A16DN8 but differs in packaging format. The series is engineered to minimize on-state resistance while maintaining superior switching performance.
The datasheet notes that an automotive-compliant variant is available under the separate part number ZXMP6A16DN8Q. Verify pinout compatibility and electrical parameters before substituting with other dual P-channel MOSFETs from different manufacturers.