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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 2.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.7A
- Rds On (Max) @ Id, Vgs：125mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：17.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：637pF @ 30V
- Power - Max：1.81W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMP6A17DN8TA is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -60V and a continuous drain current (ID) of -3.4A at +25°C. The device exhibits a low on-state resistance, specified as 125mΩ max at VGS = -10V and 190mΩ max at VGS = -4.5V. Packaged in a lead-free SO-8 surface-mount case, it operates within a temperature range of -55°C to +150°C. Total gate charge is 17.7nC at VGS = -10V, supporting fast switching performance.
Feature Summary
- Dual P-channel configuration integrated into a single low-profile SOIC package
- Qualified to AEC-Q101 standards for high reliability applications
- Designed to minimize on-state resistance while maintaining superior switching speed
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect Switches
- Motor Control
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and automotive qualification status. Standard products are electrically identical to AEC-Q101 qualified versions unless explicitly stated otherwise. Confirm compliance with RoHS directives and PPAP capability requirements prior to procurement.
Selection Notes
Select this component for designs requiring dual P-channel isolation in a compact footprint. Evaluate thermal derating curves based on PCB copper coverage and ambient conditions. Ensure gate drive voltages align with threshold specifications for optimal RDS(ON) performance. Verify that power dissipation limits remain within safe operating area boundaries under pulsed or steady-state loads.
Part Context
This part belongs to the ZXMP6A17 series of dual P-channel MOSFETs from Diodes Incorporated. It shares electrical characteristics with other variants in the family but differs in packaging and qualification levels. The SO-8 form factor distinguishes it from single-channel SOT-23 or SOT-223 alternatives within the same voltage and current class.
Replacement Considerations
Direct substitutes include ZXMP6A17GQTA and ZXMP6A17GTA, though these utilize different packages (SOT-223). Cross-compatibility requires verifying pinout alignment between SO-8 and alternative footprints. Electrical parameters such as RDS(ON) and BVDSS should be compared to ensure equivalent circuit performance.
FAQ
What is the maximum continuous drain current for this dual MOSFET?
The maximum continuous drain current is -3.4A at an ambient temperature of +25°C when measured with one active die.
Is this component suitable for automotive applications?
Yes, the ZXMP6A17DN8TA is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
What is the typical turn-off fall time?
The typical turn-off fall time is 11.3 ns under standard test conditions.
