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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() ALD212902SAL $3.52 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Tube | 8-SOIC | Surface Mount | EPAD®, Zero Threshold™ | 0°C ~ 70°C (TJ) |
![]() ALD212904PAL $3.83 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8PDIP | Tube | 8-PDIP | Through Hole | EPAD®, Zero Threshold™ | 0°C ~ 70°C (TJ) |
![]() ALD212904SAL $3.52 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Tube | 8-SOIC | Surface Mount | EPAD®, Zero Threshold™ | 0°C ~ 70°C (TJ) |
![]() ALD212908APAL $5.42 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8PDIP | Tube | 8-PDIP | Through Hole | EPAD®, Zero Threshold™ | 0°C ~ 70°C (TJ) |
![]() ALD212908ASAL $4.98 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Tube | 8-SOIC | Surface Mount | EPAD®, Zero Threshold™ | 0°C ~ 70°C (TJ) |
![]() ALD212908PAL $3.83 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8PDIP | Tube | 8-PDIP | Through Hole | EPAD®, Zero Threshold™ | 0°C ~ 70°C (TJ) |
![]() ALD212908SAL $3.60 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8SOIC | Tube | 8-SOIC | Surface Mount | EPAD®, Zero Threshold™ | 0°C ~ 70°C (TJ) |
![]() ALD212914PAL $4.77 | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8PDIP | Tube | 8-PDIP | Through Hole | EPAD®, Zero Threshold™ | - |