0912GN-650V

Overview

The Microsemi 0912GN-650V is a Common Source, Class AB GaN on SiC HEMT transistor designed for broadband L-band avionics applications. It delivers 650 Watts of pulsed RF output power at a 128µs pulse width and 10% duty factor across the 960 to 1215 MHz frequency band. The device features internal pre-match circuitry for optimal performance and provides over 17dB gain. Key electrical characteristics include a drain-source voltage (VDS) of 65V, a maximum operating junction temperature of +225°C, and a thermal resistance of 0.16 °C/W under specified test conditions.

Feature Summary

• Internally matched Common Source Class AB GaN on SiC HEMT transistor
• Provides high reliability through gold metallization and eutectic attach
• Features internal pre-match for optimized broadband performance

Applications

• Distance Measuring Equipment (DME)
• Identification Friend or Foe (IFF) systems
• Transponders
• Traffic Collision Avoidance Systems (TCAS)

Procurement Notes

Verify that the component is sourced from authorized channels to ensure authenticity. Confirm the specific package outline matches the required 55-KR dimensions for your design. Review the datasheet revision history for any updates to specifications. Ensure all testing requirements are met before deployment in end-products.

Selection Notes

Select this component for high-power L-band avionics requiring robust ruggedness. Consider the 65V drain-source voltage limit and +225°C junction temperature capability. Evaluate the need for internal matching versus external networks based on system impedance requirements.

Part Context

This part belongs to the Microsemi portfolio of RF solutions targeting defense, aerospace, and industrial markets. It utilizes Gallium Nitride on Silicon Carbide technology to achieve high power density and efficiency in a compact form factor suitable for demanding operational environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.