1011GN-2200VP

Overview

The Microchip Technology 1011GN-2200VP is a 50V, Class AB, GaN on SiC HEMT RF power pallet designed for L-Band avionics applications at 1030/1090 MHz. It delivers greater than 2200 Watts of pulsed output power with over 19.4 dB gain and greater than 70% drain efficiency under 32us pulse width and 2% duty cycle conditions. The device features an internally matched 50Ω input/output configuration in a compact 2.0" x 3.4" footprint.

Feature Summary

• Utilizes Gold Metallization and Eutectic Die Attach
• Dual Gate and Drain Bias Feeds
• Internally Pre-Matched Transistors

Applications

• Mode-S ELM Avionics Systems
• IFF Pulse Format Applications
• L-Band Avionics Output Stages

Procurement Notes

Verify the specific revision level against the datasheet to ensure compatibility with current design requirements. Confirm that the operating environment strictly adheres to the absolute maximum ratings provided by the manufacturer. Ensure proper thermal management solutions are implemented to maintain junction temperatures within safe operational limits during high-power pulsed operation.

Selection Notes

Select this component when designing high-efficiency L-Band avionics systems requiring robust pulsed power performance. The integrated matching network simplifies circuit design compared to discrete transistor implementations. Evaluate the dual bias feed architecture for optimal control and stability in demanding aerospace environments.

Part Context

This part belongs to the 1011GN series of RF power pallets manufactured by Microsemi (now Microchip Technology). These devices are engineered specifically for high-reliability aerospace and defense markets, offering superior ruggedness and Size, Weight, and Power (SWaP) characteristics compared to traditional discrete amplifier designs.

Replacement Considerations

The 1011GN-1200VEL is a compatible single-ended industry standard earless transistor capable of handling the same pulsing formats as the 1011GN-2200VP.