1011GN-30EL

Overview

The Microchip Technology 1011GN-30EL is an E-class earless Gallium Nitride (GaN) transistor designed for RF power applications. It operates within the frequency range of 1030 MHz to 1090 MHz and delivers a pulsed output power of 30W. The device supports specific pulsing configurations, including 128µs at 10% duty cycle and 32µs at 2% duty cycle. It is housed in a 55-QQP surface-mount package and requires a supply voltage of 50V.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-efficiency RF performance
• Designed as an E-class earless driver for linear amplification
• Capable of handling high pulsed output power with precise duty cycle control

Applications

• RF power amplification in communication systems
• Base station transmitter modules
• Electronic warfare and radar systems

Procurement Notes

Verify that the component matches the specified 55-QQP surface-mount package and 50V rating. Confirm the manufacturer is Microchip Technology, as this is a non-cancellable and non-returnable item. Ensure the application environment supports the required 1030-1090 MHz frequency band and thermal management for 30W pulsed operation. Cross-reference datasheet specifications for electrical limits before integration.

Selection Notes

Select this component when a high-power GaN solution is needed for the 1030-1090 MHz band. It is suitable for designs requiring E-class operation with specific pulse widths of 128µs or 32µs. Consider the 55-QQP package for surface-mount assembly. Evaluate thermal requirements for 30W output and ensure the system can handle the 50V supply constraint. Compare against other GaN transistors if different frequency ranges or power levels are required.

Part Context

This part belongs to Microchip's portfolio of discrete semiconductor products, specifically within the RF and Wireless category. It complements their broader range of analog and power management solutions. The 1011GN series represents advanced GaN technology aimed at improving efficiency and power density in RF applications compared to traditional silicon-based devices.