1214-300M

1214-300M

$315.00
  • Description:RF TRANS NPN 50V 1.4GHZ 55ST
  • Series:-

SKU:0e0f6f942414 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF TRANS NPN 50V 1.4GHZ 55ST
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Frequency - Transition:1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7dB
  • Power - Max:88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 500mA, 5V
  • Current - Collector (Ic) (Max):4A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:55ST
  • Supplier Device Package:55ST
  • Grade:-
  • Qualification:-

Download product information

1214-300M

Overview

The Microsemi Corporation 1214-300M is an NPN silicon microwave power transistor designed for broadband Class C operation. It operates within the 1.2 GHz to 1.4 GHz frequency range and delivers a maximum power output of 300 Watts under pulsed conditions, specifically with a 150 ms pulse width and 10% duty cycle. The device features an interdigitated geometry for high efficiency and includes internal input and output impedance matching. It is housed in a hermetic metal/ceramic package suitable for base mounting.

Feature Summary

  • NPN silicon construction with common base configuration
  • Broadband Class C operational capability
  • High-efficiency interdigitated geometry design
  • Integrated internal input and output impedance matching

Applications

  • Radar systems requiring pulsed power amplification
  • Microwave communication transmitters
  • Industrial RF heating applications

Procurement Notes

Verify component authenticity through authorized channels due to potential availability from multiple distributors including Tyco Electronics and M/A-COM Technology Solutions. Confirm datasheet revisions and specific lot traceability requirements before procurement. Ensure handling procedures comply with electrostatic discharge standards for hermetic ceramic packages.

Selection Notes

Select this component for applications demanding high peak power in the L-band spectrum. The internal matching simplifies circuit design by reducing external component count. Evaluate thermal management requirements carefully given the 300W pulsed output. Consider the hermetic package for reliability in harsh environments compared to plastic alternatives.

Part Context

This part belongs to the family of microwave power transistors utilized in defense and aerospace sectors. Similar devices include variants with different power ratings or frequency bands. The 1214 series typically denotes specific geometric and performance characteristics standardized across manufacturer product lines for radar and communication subsystems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with PH1214-300M listings from Tyco Electronics or M/A-COM for equivalent specifications.

1214-300M1214-300M
$315.00
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