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The 1214GN-120V is a GaN on SiC RF power transistor designed for L-Band radar applications. It operates within the 1.2 GHz to 1.4 GHz frequency band, delivering a minimum output power of 120W at a 50V drain bias. The device supports a 300 µs pulse width with a 10% duty cycle, providing a typical power gain of 17.5 dB and an efficiency of 65%. It utilizes a 55-QQ package with a maximum thermal resistance (θjc) of 1.4 °C/W.
Verify the specific part number suffix against official Microchip documentation to ensure correct package type and electrical specifications. Confirm that the procurement channel is an authorized distributor to guarantee component authenticity and traceability. Check for any required environmental or reliability certifications relevant to your specific avionics or defense application requirements before finalizing orders.
Select this component when designing L-Band radar amplifiers requiring 120W output power. Ensure the system can accommodate the 50V drain bias and manage the thermal load corresponding to the 1.4 °C/W junction-to-case thermal resistance. Verify compatibility with the 55-QQ package footprint and pinout during PCB layout and mechanical integration phases.
This device belongs to Microchip's portfolio of GaN on SiC RF power transistors optimized for avionics, communications, and radar markets. These components are engineered to provide high power density and efficiency in challenging environments, including airborne, ground-based, shipborne, missile, and space applications.
Consult the official datasheet for direct cross-reference information. No alternative part numbers are explicitly listed as substitutes in the provided source material.