1214GN-180LV

Overview

The Microchip Technology 1214GN-180LV is a Common Source, Class AB GaN on SiC HEMT transistor designed for L-Band Radar applications. It delivers 180 Watts of pulsed RF output power across the 1200 to 1400 MHz band with over 16.6 dB gain. The device features internal pre-match and hermetic sealing using gold metallization and eutectic attach. Key electrical parameters include a drain-source voltage (VDSS) of 150 V, maximum power dissipation of 300 W at 25°C, and a thermal resistance (θjc) of 0.73 °C/W under 3ms pulse width and 30% duty factor conditions.

Feature Summary

• Internally matched Common Source Class AB GaN on SiC HEMT structure
• Hermetically sealed package utilizing gold metallization and eutectic attach
• Internal pre-match network for optimal broadband performance
• Designed specifically for high-reliability L-Band Radar applications

Applications

• L-Band Radar systems
• Pulsed RF power amplification
• Broadband transmitter modules

Procurement Notes

Verify the specific revision level against the latest Microsemi datasheet before procurement, as specifications are subject to change. Confirm that the application environment strictly adheres to the pulsed operation limits defined in the absolute maximum ratings. Ensure proper thermal management solutions are implemented to maintain junction temperatures within the specified operating range during high-power pulses.

Selection Notes

Select this component when designing systems requiring high pulsed power density in the L-Band spectrum. The internal matching simplifies circuit design by reducing external component count. Consider the 50V bias requirement and the need for precise gate bias control. Evaluate the thermal resistance characteristics against the system's cooling capabilities to ensure reliable operation under the specified 3ms pulse width and 30% duty cycle constraints.

Part Context

This device belongs to the family of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) manufactured by Microsemi (formerly Microsemi). These transistors leverage Silicon Carbide substrates for superior thermal conductivity and ruggedness compared to traditional silicon-based RF devices. The 1214GN series is engineered for high-power, high-efficiency applications where reliability and wide bandwidth are critical performance factors.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.