1214GN-50E

Overview

The Microchip Technology 1214GN-50E is a GaN transistor operating in the 1200-1400 MHz band. It delivers 50W output power at 300µS, 10% pulsing with a 50V bias voltage. The device features >60% typical drain efficiency and over 16dB typical power gain. Absolute maximum ratings include a 150V drain-source voltage and +200°C operating junction temperature. Electrical characteristics specify 58W max output power and 67% max efficiency at 1.4 GHz.

Feature Summary

• High-power L-band RF amplification using Gallium Nitride technology
• Excellent gain flatness across the operational frequency range
• Robust construction with gold metallization and eutectic die attach

Applications

• Radar systems
• L-Band avionics
• Communications infrastructure
• Industrial applications

Procurement Notes

Verify the specific suffix (EL or EP) required for your application, as these denote different package options such as test fixtures or pallets. Confirm that the 55-QQP/QQ/Pallet form factor matches your thermal management and mounting requirements. Ensure your design supports the necessary 50V bias and pulsed input conditions to achieve specified performance metrics.

Selection Notes

Select this component for high-efficiency L-band amplification where compact size and reliability are critical. The device requires careful thermal management due to its high power dissipation capabilities. Designers must account for the specific pulse width and duty cycle constraints to maintain the rated output power and efficiency levels without exceeding absolute maximum ratings.

Part Context

This part belongs to the E Series Earless/Eared GaN Transistor lineup from Microsemi (now Microchip). It is designed for demanding RF environments requiring high linearity and power density. The product family emphasizes ruggedness through advanced packaging and metallization techniques suitable for aerospace and defense sectors.

Replacement Considerations

Public confirmed substitute part numbers only; omit otherwise.