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Product Detailed Parameters
- Description：TRANS NPN SOT-23
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 1985-MBT2222A is a single NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose amplification and switching applications. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device supports a maximum collector current of 600 mA and withstands a collector-emitter voltage of 40 V. Key electrical characteristics include a gain bandwidth product of 300 MHz and a power dissipation rating of 350 mW. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single NPN configuration optimized for general-purpose use
- High-frequency performance with 300 MHz gain bandwidth
- Robust thermal stability across extended operating temperatures
Applications
- General-purpose signal amplification circuits
- Electronic switching applications
- Audio amplifier stages
Procurement Notes
Verify the specific datasheet version associated with the 1985-MBT2222A designation, as this identifier often corresponds to distributor-specific cataloging rather than the manufacturer's primary part number MBT2222A. Confirm that the electrical parameters match the standard MBT2222A specifications, particularly regarding power dissipation and package type, to ensure compatibility with design requirements.
Selection Notes
Select this component when a compact SOT-23 packaged NPN transistor is required for low-power general-purpose tasks. It serves as a suitable alternative to through-hole equivalents like the 2N2222 when space constraints dictate surface-mount technology. Ensure the application does not exceed the 350 mW power dissipation limit or the 600 mA continuous collector current specification.
Part Context
This component belongs to the MBT2222 series of small-signal NPN transistors from onsemi. It is functionally equivalent to the widely used 2N2222 family but packaged for surface-mount assembly. The '1985' prefix typically indicates a distributor-specific stock keeping unit or ordering code rather than a distinct technical variant from the base MBT2222A model.
Replacement Considerations
- MBT2222A
- MMBT2222A
FAQ
What is the maximum power dissipation for the 1985-MBT2222A?
The maximum power dissipation is 350 mW.
Is the 1985-MBT2222A a dual or single transistor?
It is a single NPN bipolar junction transistor.
