1N4623-1E3TR

Single Zener Diodes Overview

The Microsemi 1N4623-1E3TR is a 500 mW Zener diode with a nominal voltage of 4.3 V and ±5% tolerance. It features an internal metallurgical bond within a hermetically sealed glass DO-35 (DO-204AH) axial-lead package. The device operates across a junction temperature range of -65°C to +175°C, exhibits a maximum dynamic impedance of 1600 Ohms at a test current of 250 µA, and maintains a reverse leakage current of 2.0 µA at 2.0 V.

Single Zener Diodes Feature Summary

• Internal metallurgical bond construction for enhanced reliability
• Hermetically sealed glass axial-lead packaging
• Qualified per MIL-PRF-19500/435 standards

Single Zener Diodes Applications

• High-reliability voltage regulation circuits
• Radiation-hardened electronic systems
• Precision reference voltage generation

Single Zener Diodes Procurement Notes

Verify the specific suffix configuration against the datasheet nomenclature. Confirm that the RoHS compliant 'e3' designation aligns with commercial grade specifications. Ensure the tape and reel 'TR' suffix matches the required packaging format. Validate that the metallurgically bonded variant meets the intended application requirements.

Single Zener Diodes Selection Notes

Select this component for applications requiring high reliability and radiation hardness. The DO-35 package provides flexible axial-lead mounting options. Consider the low noise density characteristics for sensitive signal processing. Verify thermal derating curves for power dissipation limits in the target operating environment.

Single Zener Diodes Part Context

This part belongs to the 1N4614-1 through 1N4627-1 series of 500 mW Zener diodes. These devices are available in various reliability levels including JAN, JANTX, JANTXV, and JANS. The series offers voltages from 1.8 to 100 V with standard 5%, 2%, and 1% tolerances.

Single Zener Diodes Replacement Considerations

Direct substitutes include other manufacturers' 1N4623 variants. Verify compatibility regarding package dimensions, electrical parameters, and qualification levels before substitution.