1N4708 TR PBFREE

Overview

The Central Semiconductor Corp 1N4708 TR PBFREE is a silicon Zener diode designed for low-level applications requiring extremely low operating current and leakage. It features a nominal Zener voltage of 22 V with a 5% tolerance, tested at 50 μA. The device dissipates up to 500 mW and operates within a junction temperature range of -65°C to +200°C. It utilizes the DO-35 axial leaded package and is supplied in tape and reel format.

Feature Summary

• Designed for applications requiring extremely low operating current and low leakage
• Provides stable voltage regulation with tight 5% tolerance
• Capable of operation across an extended temperature range

Applications

• Low-level voltage reference circuits
• Precision voltage regulation
• General-purpose circuit protection

Procurement Notes

Verify that the ordering suffix 'TR' corresponds to the tape and reel packaging configuration specified by the manufacturer. Confirm that the 'PBFREE' designation aligns with required environmental compliance standards. Ensure the component matches the DO-35 mechanical outline and electrical characteristics documented in the official datasheet before finalizing procurement.

Selection Notes

Select this component when a precise 22 V reference is needed with minimal quiescent current draw. The 500 mW power rating supports moderate load requirements. Verify that the DO-35 through-hole package fits the target board layout and that the 50 μA test current condition meets the design's sensitivity constraints.

Part Context

This part belongs to the 1N4678 through 1N4717 series of low-level silicon Zener diodes from Central Semiconductor. The series covers voltages from 1.8 V to 43 V, all sharing the same 500 mW power dissipation and 5% tolerance specifications. These devices are standardized for general-purpose electronic applications requiring reliable voltage clamping or referencing.

Replacement Considerations

Substitutes must match the 22 V nominal Zener voltage, 500 mW power rating, and DO-35 package. Verify that alternative components maintain similar leakage current and voltage change characteristics under identical test conditions.