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The Microchip Technology 1N5711E3/TR is a small-signal Schottky diode manufactured using silicon technology. It features a single configuration housed in a DO-35-2 through-hole package and supplied in a reel format. Key electrical parameters include a maximum repetitive reverse voltage (Vrrm) of 50 V, an average forward current (If) of 33 mA, and a maximum forward voltage (Vf) of 1 V at the specified current. The device exhibits a maximum reverse leakage current (Ir) of 200 nA. It is designed to operate within a junction temperature range from -65°C to +150°C.
Verify the specific suffix 'e3' confirms lead-free compliance status against the latest manufacturer datasheet. Confirm the 'TR' designation indicates tape-and-reel packaging rather than bulk units. Ensure the order quantity aligns with the manufacturer's standard reel pack size requirements. Cross-reference the component marking with official identification guides to prevent counterfeit substitution.
Select this component when a through-hole Schottky diode with a 50 V rating and 33 mA current capacity is required. The DO-35-2 package is suitable for standard PCB mounting techniques. Consider the -65°C to +150°C operating range for harsh environmental conditions. Verify that the 1 V forward voltage drop meets the efficiency requirements of the target circuit design.
This part belongs to the 1N5711 series of small-signal Schottky diodes produced by Microchip Technology. The series is characterized by its use in RF and microwave applications due to fast switching speeds. The 'e3' suffix typically denotes environmental compliance, while 'TR' specifies the reel packaging method for automated assembly processes.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology engineering support or authorized distributors for verified cross-reference data before implementing any alternative components.