2729GN-270VP

Overview

The Microchip Technology 2729GN-270VP is a Gallium Nitride (GaN) field-effect transistor designed for high-power radio frequency applications. It operates within the 2700–2900 MHz frequency range and delivers up to 270W of output power at a drain voltage of 50V. The device features a 125V drain-source breakdown voltage, a continuous drain current of 24mA, and a maximum power dissipation of 517W. Constructed using GaN-on-SiC technology, it utilizes a 55-QP screw-mount package with gate-source voltage limits of -8V to 0V.

Feature Summary

• Utilizes GaN-on-SiC technology for enhanced RF performance
• Capable of delivering 270W output power in the 2700-2900 MHz band
• Features robust 125V drain-source breakdown voltage
• Designed for screw-mount installation via 55-QP package

Applications

• High-power RF amplification
• Military radar systems
• Electronic warfare equipment
• Communications infrastructure

Procurement Notes

Verify component authenticity through authorized Microchip Technology channels or certified distributors. Confirm that the specific suffix matches the required specifications, as variations may exist. Request official datasheets and test reports to validate electrical parameters against application requirements before integration into final designs.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the S-band spectrum. Ensure thermal management solutions accommodate the 517W power dissipation capability. Verify that the system architecture supports the specific gate drive requirements and that the mechanical mounting aligns with the 55-QP screw-mount form factor constraints.

Part Context

This part belongs to Microchip's portfolio of wide-bandgap semiconductor devices. It represents a shift from traditional silicon-based RF power transistors, offering superior performance metrics for demanding wireless communication and defense electronics sectors where size, weight, and power efficiency are critical design factors.

Replacement Considerations

Consult official Microchip documentation for qualified substitute part numbers. Do not assume cross-compatibility with other manufacturers' GaN FETs without rigorous electrical and thermal validation. Verify pinout and package dimensions match the existing board layout if considering alternative sources.

FAQ

What is the operating frequency range?

The device operates within the 2700 to 2900 MHz frequency range.

What type of substrate is used?

The transistor is constructed using Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology.

How is the device mounted?

It utilizes a 55-QP package designed for screw-mount installation.