2729GN-300VP

2729GN-300VP

  • Description:RF MOSFET HEMT 50V 55-QP
  • Series:VP

SKU:aaf26402a25c Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V 55-QP
  • Series:VP
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:HEMT
  • Frequency:2.7GHz ~ 2.9GHz
  • Gain:15.3dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:75 mA
  • Power - Output:335W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:55-QP
  • Supplier Device Package:55-QP
  • Configuration:-

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2729GN-300VP

Overview

The Microchip Technology 2729GN-300VP is a hermetically sealed, internally matched GaN on SiC HEMT pallet designed for S-band pulsed surveillance radar applications. Operating within the 2700 MHz to 2900 MHz frequency band, this common source Class AB device delivers 300 Watts of pulsed RF output power at a 100µs pulse width and 11% duty cycle. The component features over 14.5 dB gain and utilizes gold metallization for superior ruggedness.

Feature Summary

  • Internally matched input and output impedance for simplified integration
  • Hermetically sealed construction with gold transistor metallization
  • High reliability design optimized for harsh operational environments

Applications

  • S-Band Primary Pulsed Surveillance Radar Systems

Procurement Notes

Verify current availability directly with the manufacturer or authorized distributors as lead times may vary. Confirm that the specific VP suffix denotes the matched pallet configuration rather than the bare die. Ensure all handling procedures comply with electrostatic discharge protocols required for sensitive semiconductor components during installation.

Selection Notes

Select this component when high-power density and wide bandwidth are required for S-band radar transmitters. The internal matching network reduces external circuit complexity compared to unmatched dies. Evaluate thermal management requirements based on the specified junction temperature limits and thermal resistance characteristics under pulsed operating conditions.

Part Context

This part belongs to the 2729GN series of Gallium Nitride High Electron Mobility Transistors manufactured by Microchip Technology. It represents an evolution in solid-state radar transmitter technology, replacing older vacuum tube solutions with more compact and reliable semiconductor alternatives suitable for modern defense and aerospace systems.

Replacement Considerations

Consult official documentation for direct cross-reference data. Verify pinout compatibility and thermal interface specifications before substituting with alternative suppliers' offerings.

2729GN-300VP2729GN-300VP

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