2731GN-120V

Overview

The Microchip Technology 2731GN-120V is a Class-AB GaN-on-SiC HEMT transistor designed for S-Band radar applications. It provides over 15.7 dB gain and 120 W of pulsed RF output power at a 200 μs pulse width and 10% duty factor across the 2700 MHz to 3100 MHz band. The device features internal matching networks, gold metallization, and eutectic attach for high reliability. Absolute maximum ratings include a drain-source voltage of 125 V, maximum power dissipation of 240 W at 25 °C, and an operating junction temperature of 250 °C.

Feature Summary

• Internally matched common-source architecture simplifies circuit design
• GaN-on-SiC technology ensures superior ruggedness and reliability
• Gold metallization and eutectic attachment enhance performance stability

Applications

• S-Band pulsed radar systems
• Broadband RF amplification
• Military and aerospace communication equipment

Procurement Notes

Verify that the component matches the specific datasheet revision 1.0 documentation. Confirm that the application environment supports the specified thermal resistance and junction temperature limits. Ensure all performance testing is conducted by the buyer as specifications are not verified guarantees. Check export classification status if applicable to your region.

Selection Notes

Select this component when high power density and wide bandwidth are required in the S-Band range. Consider the hermetically sealed package for harsh environments. Evaluate the need for internal matching networks to reduce external component count. Verify bias conditions align with the constant current requirements specified in the electrical characteristics.

Part Context

This device belongs to Microsemi's portfolio of discrete semiconductor components targeting high-performance RF applications. It utilizes Gallium Nitride on Silicon Carbide technology to achieve high efficiency and power handling capabilities. The product line focuses on solutions for aerospace, defense, and industrial markets requiring robust and reliable semiconductor devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) is rated at 125 V.

Is the transistor internally matched?

Yes, the 2731GN-120V includes internal input and output matching networks to facilitate easier circuit design.

What is the typical power gain at 2900 MHz?

The typical power gain is 16.8 dB when tested at 2900 MHz with a 3.2 W input power.