Gate Driver 2EDN7534RXTMA1 product image

2EDN7534RXTMA1

$0.59
  • Description:IC GATE DRVR LOW-SIDE 8TSSOP
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:767dc982ae09 Category: Brand:

  
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2EDN7534RXTMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR LOW-SIDE 8TSSOP. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for 2EDN7534RXTMA1

  • Description:IC GATE DRVR LOW-SIDE 8TSSOP
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 20V
  • Logic Voltage - VIL, VIH:1.4V, 1.9V
  • Current - Peak Output (Source, Sink):5A, 5A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):8.6ns, 6ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package:PG-TSSOP-8
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

Gate Driver datasheet and documents for 2EDN7534RXTMA1

2EDN7534RXTMA1

Gate Driver Overview

The Infineon Technologies 2EDN7534RXTMA1 is a dual-channel low-side MOSFET gate driver housed in a TSSOP-8 surface-mount package. It features an inverting logic configuration with a maximum propagation delay of 25 ns. The device delivers a peak output current of 5 A and operates within a supply voltage range of 4.5 V to 20 V. Key timing parameters include a rise time of 8.6 ns and a fall time of 6 ns. The internal drain-source on-resistance is specified at 1.4 Ohms, supporting efficient switching for power applications.

Gate Driver Feature Summary

  • Dual-channel architecture providing independent control for two low-side switches
  • Inverting signal configuration for precise logical interface compatibility
  • High-speed switching performance with nanosecond-level rise and fall times

Gate Driver Applications

  • Low-side switching control in motor drive circuits
  • Power management systems requiring isolated or direct gate driving
  • Industrial automation equipment utilizing MOSFET-based power stages

Gate Driver Procurement Notes

Verify the specific suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and moisture sensitivity levels. Ensure that the inverting logic requirement aligns with the system's control signal polarity before finalizing procurement orders.

Gate Driver Selection Notes

Select this component when an inverting low-side driver is required for dual-channel applications. The 5 A output capability suits standard MOSFET loads, while the wide supply voltage range accommodates various logic levels. Consider the 1.4 Ohm on-resistance for thermal management in high-frequency switching scenarios.

Gate Driver Part Context

This part belongs to the 2EDN series of gate drivers from Infineon Technologies, designed specifically for driving power transistors. The series offers robust performance for industrial and automotive applications, emphasizing reliability and compact integration within modern power electronics designs.

Gate Driver Replacement Considerations

The 2EDN7533RXTMA1 serves as a functional substitute but utilizes non-inverting logic instead of inverting. Verify signal inversion requirements carefully. Other family members like the 2EDN7524RXTMA1 offer different timing characteristics and should be evaluated based on specific speed needs.

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