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The General Semiconductor 2N1650 is a single NPN bipolar junction transistor designed for power switching applications. It features an 80V collector-emitter breakdown voltage and supports a continuous collector current of 3A. The device is housed in a TO-111 package with stud mounting capability, allowing for effective thermal dissipation. With a maximum power rating of 20W, it is suitable for moderate-voltage tasks requiring reliable performance in demanding electronic circuits.
Verify the manufacturer designation as General Semiconductor or its successors, such as Vishay or New Jersey Semi-Conductor Products, due to historical acquisitions. Confirm the package type is TO-111-4 with stud mounting. Ensure compliance with RoHS standards if required by the application. Check datasheet revisions for any parameter updates before final integration into designs.
Select this component when an NPN transistor with 80V blocking capability and 3A current capacity is required. The stud mount option is preferred for high-power scenarios needing direct chassis cooling. Consider the 20W power dissipation limit and ensure adequate thermal management solutions are implemented to maintain safe operating temperatures during continuous operation.
The 2N1650 belongs to the family of single bipolar transistors manufactured by General Semiconductor. This part number represents a legacy design often associated with robust industrial-grade components. It is frequently referenced in contexts involving older equipment maintenance or specific high-reliability power applications where established performance characteristics are valued over modern miniaturization trends.
Cross-reference with Vishay-branded versions of the same part number, as Vishay acquired General Semiconductor's discrete product lines. Verify pinout compatibility and thermal resistance values against potential substitutes from other manufacturers like New Jersey Semi-Conductor Products to ensure functional equivalence in existing circuit layouts.