2N2714 TIN/LEAD

$0.26

Description：18V 200MA 360MW TH TRANSISTOR-SM
Series：-

SKU:be253a4f4cdb Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N2714 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 18V 200MA 360MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N2714 TIN/LEAD

Description：18V 200MA 360MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：200 mA
Voltage - Collector Emitter Breakdown (Max)：18 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：75 @ 50mA, 300mV
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N2714 TIN/LEAD

2N2714 TIN/LEAD

Single Bipolar Transistors Overview

The 2N2714 TIN/LEAD is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-base voltage of 18V, a collector-emitter voltage of 18V, and an emitter-base voltage of 5.0V. The device supports a maximum continuous collector current of 200mA with a power dissipation rating of 360mW. Designed for through-hole mounting, it utilizes the TO-92-3 package configuration. This component is classified as a small-signal transistor suitable for general-purpose switching and amplification applications within its specified electrical limits.

Single Bipolar Transistors Feature Summary

Utilizes silicon technology for reliable small-signal operation
Designed for through-hole mounting in standard TO-92-3 packages
Configured as a single NPN bipolar junction transistor

Single Bipolar Transistors Applications

General-purpose signal amplification
Low-power switching circuits
Small-signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation when ordering to ensure compliance with material requirements. Confirm that the TIN/LEAD variant meets all applicable regulatory standards for your target market. Cross-reference the manufacturer's latest documentation to validate active lifecycle status and availability before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring low-voltage NPN switching or amplification with through-hole compatibility. Ensure the circuit design stays within the 18V voltage limits and 200mA current constraints. Consider thermal management requirements given the 360mW power dissipation rating in the TO-92-3 package.

Single Bipolar Transistors Part Context

This part belongs to the small-signal transistor category from Central Semiconductor Corp. It serves as a fundamental discrete semiconductor device for electronic circuits. The TO-92-3 package provides a compact form factor suitable for various consumer and industrial electronics assemblies requiring reliable NPN performance.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers.