2N2907AL

Single Bipolar Transistors Overview

The Microchip Technology 2N2907AL is a PNP silicon switching transistor designed for high-reliability applications. It operates with a maximum collector-emitter voltage of 60 V and supports a continuous collector current of 600 mA. The device dissipates up to 800 mW of power and maintains a junction temperature range from -65°C to +200°C. Qualified per MIL-PRF-19500/290, it utilizes a TO-5 metal can package.

Single Bipolar Transistors Feature Summary

• Military qualified to the JANS level for high-reliability environments
• High thermal stability with an extended operating temperature range up to +200°C
• Hermetically sealed metal can construction

Single Bipolar Transistors Applications

• High-reliability military systems
• Aerospace switching circuits
• Harsh environment general-purpose applications

Single Bipolar Transistors Procurement Notes

Verify the specific qualification level (JAN, JANTX, or JANTXV) required for your design, as the base part number may be available in various reliability grades. Confirm that the TO-5 package meets your mechanical constraints. Ensure compliance with export control regulations if applicable to your region.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed PNP transistor is necessary for extreme temperature operation. Compare the 800 mW power dissipation against your circuit requirements. Consider the TO-5 through-hole mounting style for compatibility with existing board layouts.

Single Bipolar Transistors Part Context

This device belongs to the 2N2904/2N2905 family of switching transistors. It serves as a robust alternative to commercial-grade BJTs where radiation hardness and thermal endurance are critical. The manufacturer offers companion NPN devices within the same qualified series.