Single Bipolar Transistors 2N4123 APM PBFREE product image

2N4123 APM PBFREE

$0.12
  • Description:30V 200MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:4bf53869b188 Category: Brand:

  
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2N4123 APM PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 30V 200MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N4123 APM PBFREE

  • Description:30V 200MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:950mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 2mA, 1V
  • Power - Max:1.5 W
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N4123 APM PBFREE

2N4123 APM PBFREE

Single Bipolar Transistors Overview

The 2N4123 APM PBFREE is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical ratings include a collector-emitter voltage (VCEO) of 75 V, a collector-base voltage (VCBO) of 75 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a maximum continuous DC collector current of 200 mA with a power dissipation capacity of 625 mW. Its transition frequency (fT) is specified at 150 MHz, and the minimum DC current gain (hFE) is 100 when tested at 150 mA and 1 V.

Single Bipolar Transistors Feature Summary

  • High-voltage capability suitable for general-purpose switching and amplification applications
  • Wide operating temperature range supporting extreme environmental conditions
  • Standardized TO-92-3 through-hole mounting configuration

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Electronic switching applications
  • Signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version for the 2N4123 APM PBFREE to confirm exact hFE binning and thermal resistance values. Ensure that the procurement documentation explicitly references the Central Semiconductor manufacturer part number to distinguish it from generic equivalents. Confirm RoHS compliance status matches project requirements before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with 75 V breakdown voltage and 200 mA current handling is required in a compact TO-92 package. Consider the 150 MHz transition frequency for moderate-speed signal applications. Verify that the 625 mW power dissipation rating aligns with the thermal management strategy of the target circuit design.

Single Bipolar Transistors Part Context

This component belongs to the standard small-signal BJT family produced by Central Semiconductor. It serves as a common replacement for legacy 2N4123 specifications in consumer electronics and industrial control systems. The APM suffix typically denotes specific packaging or testing criteria defined by the manufacturer for bulk distribution channels.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other manufacturers' 2N4123 variants. Verify pinout compatibility and ensure equivalent VCEO and IC ratings are met. Cross-reference datasheets to confirm matching hFE ranges and thermal characteristics for seamless integration.

2N4123 APM PBFREE2N4123 APM PBFREE
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