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Product Detailed Parameters
- Description：TRANS NPN 50V 0.1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 100µA, 5V
- Power - Max：625 mW
- Frequency - Transition：30MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5210NMBU is an NPN silicon general-purpose amplifier transistor designed for low-noise, high-gain applications. It operates effectively at collector currents ranging from 1 µA to 50 mA. Key electrical characteristics include a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. The device features a DC current gain (hFE) between 200 and 600 under specified test conditions. It offers a transition frequency of 30 MHz and maintains a low noise figure, making it suitable for sensitive signal amplification tasks.
Feature Summary
- Designed for low-noise, high-gain general-purpose amplifier applications
- Operates effectively across a wide range of collector currents from 1 µA to 50 mA
- Provides high DC current gain with values reaching up to 600
- Features a transition frequency of 30 MHz for small-signal bandwidth
Applications
- Low-noise audio pre-amplifiers
- General-purpose signal amplification circuits
- High-gain amplifier stages in electronic systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm component status as obsolete or active through authorized distributors. Ensure compliance with environmental standards such as RoHS and REACH by checking the manufacturer's latest product information sheet before finalizing procurement decisions.
Selection Notes
Select this component when low noise performance and high gain are required for small-signal amplification. Evaluate the operating collector current range to ensure it aligns with the 1 µA to 50 mA design window. Consider the 50 V breakdown voltage limits for circuit protection requirements. Verify thermal management needs based on the specified power dissipation ratings in the datasheet.
Part Context
The 2N5210 is a legacy NPN bipolar junction transistor originally manufactured by Fairchild Semiconductor, now part of onsemi. It belongs to the family of general-purpose amplifier transistors. The MMBT5210 designation often refers to the same electrical specification in a different surface-mount package. This component serves as a standard solution for discrete analog amplification tasks.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Equivalent parts may include other NPN general-purpose amplifiers with matching 50 V ratings and similar hFE ranges. Verify pinout compatibility and package dimensions before substitution.
