2N5223 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5223 TIN/LEAD is a silicon NPN small signal transistor housed in a TO-92 through-hole package. It features a maximum collector-emitter voltage of 20 V and a continuous collector current of 100 mA. The device supports a power dissipation of up to 625 mW and operates within a temperature range of -65 °C to +150 °C. Designed for general-purpose amplifier and switching applications, it offers a minimum DC current gain (hFE) of 200 at specified test conditions.

Feature Summary

• Utilizes silicon technology for reliable small-signal amplification and switching operations.
• Provides high DC current gain suitable for low-level signal processing tasks.
• Features a robust thermal design allowing operation at elevated junction temperatures.

Applications

• General purpose amplifier circuits
• Electronic switching applications
• Oscillator circuits

Procurement Notes

Verify the specific ordering suffix ensures compliance with lead-free or tin/lead requirements as designated by the manufacturer. Confirm RoHS status and environmental declarations against current regulatory standards before integration into production designs.

Selection Notes

Select this component when a standard NPN small-signal transistor with moderate voltage ratings and high gain is required. Ensure the application circuit stays within the 20 V collector-emitter limit and 100 mA current constraints to maintain reliability.

Part Context

This part belongs to the family of small signal transistors manufactured by Central Semiconductor Corp. These components are widely used in discrete semiconductor applications requiring compact packaging and stable electrical characteristics for consumer and industrial electronics.

Replacement Considerations

Consult official datasheets for pin-compatible alternatives from other manufacturers. Verify that substitute parts meet or exceed the 20 V voltage rating and 100 mA current specifications to ensure functional equivalence.